With the adoption of the near-infrared SLD, thickness measurement for the wafer alone is possible even while BG tape is affixed. Even when there is strong pattern-based variation on the surface of the wafer, accurate in-line measurement is possible.
The SI-F80R Series employs a near-infrared SLD that can penetrate through Si, GaAs, SiC, InP, a-Si, and other semiconductors.
Variations from wafer surface patterns and measurement alarms can be held to a minimum by decreasing the beam spot diameter and surface aberrations inside the spot beam.
A measuring device that can solve the problems of conventional wafer measurement methods.
Explains the measurement principle that has achieved 1 nm accuracy in an easy to understand manner.