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| The SI-F80R Series employs a near-infrared SLD that can penetrate through Si, GaAs, SiC, InP, a-Si, and other semiconductors. |
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| Variations from wafer surface patterns and measurement alarms can be held to a minimum by decreasing the beam spot diameter and surface aberrations inside the spot beam. |
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| A measuring device that can solve the problems of conventional wafer measurement methods. |
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| Explains the measurement principle that has achieved 1 nm accuracy in an easy to understand manner. |
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